发明名称 Processing method for semiconductor wafer
摘要 A processing method for a semiconductor wafer which is generally circular, and which has on the face thereof an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device region having many rectangular regions defined by streets arranged in a lattice pattern, each of the rectangular regions having a semiconductor device disposed therein. The processing method includes a back grinding step of grinding a region in the back of the wafer corresponding to the device region to form a circular concavity in the back of the wafer corresponding to the device region.
申请公布号 US7348275(B2) 申请公布日期 2008.03.25
申请号 US20060481002 申请日期 2006.07.06
申请人 DISCO CORPORATION 发明人 SEKIYA KAZUMA
分类号 H01L21/302 主分类号 H01L21/302
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