发明名称 SEMICONDUCTOR DEVICE HAVING ACTIVE REGISTER AND BIASING METHOD OF THE SAME
摘要 A semiconductor device including an active resistor and a method for biasing the same are provided to maintain constantly the resistance of the active resistor by preventing a forward bias effect generated between a substrate and the active resistor. A semiconductor device includes a deep N-well region(30), N-well regions(42,44), a P-well region(50), and a first resistor(60). The deep N-well region is formed on a substrate. The N-well regions, which are formed on the deep N-well region, are connected to a first source voltage. The P-well region is formed on the deep N-well region. The first resistor is formed on the P-well region. The P-well region is connected to a second source voltage and the substrate through a second resistor(70).
申请公布号 KR20080025993(A) 申请公布日期 2008.03.24
申请号 KR20060090872 申请日期 2006.09.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, HYUK JOON;KIM, SUNG HOON;KIM, JOUNG YEAL
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项
地址