发明名称 |
SEMICONDUCTOR DEVICE HAVING ACTIVE REGISTER AND BIASING METHOD OF THE SAME |
摘要 |
A semiconductor device including an active resistor and a method for biasing the same are provided to maintain constantly the resistance of the active resistor by preventing a forward bias effect generated between a substrate and the active resistor. A semiconductor device includes a deep N-well region(30), N-well regions(42,44), a P-well region(50), and a first resistor(60). The deep N-well region is formed on a substrate. The N-well regions, which are formed on the deep N-well region, are connected to a first source voltage. The P-well region is formed on the deep N-well region. The first resistor is formed on the P-well region. The P-well region is connected to a second source voltage and the substrate through a second resistor(70).
|
申请公布号 |
KR20080025993(A) |
申请公布日期 |
2008.03.24 |
申请号 |
KR20060090872 |
申请日期 |
2006.09.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, HYUK JOON;KIM, SUNG HOON;KIM, JOUNG YEAL |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|