| 摘要 |
PURPOSE: An LED and its manufacturing method are provided to emit high brightness light with no transparent metal for current diffusion in a defect region by using a GaN substrate grown by a SAG method(selective area growth). CONSTITUTION: A nGaN layer(16), an active layer(17), and pGaN layer(18) are sequentially deposited on a GaN substrate grown by SAG. A portion of the nGaN layer is exposed by vertical mesa etching of the pGaN, the active layer and the nGaN layer. A transparent metal(25) for current diffusion is deposited on the pGaN layer. |
