发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device is provided to achieve the reduction in size and increase in density of the semiconductor device, because a wiring structure can be formed on an overlying layer of a radio communication module including elements higher than a mounting surface of an electrical component. A method for manufacturing a semiconductor device comprises the steps of: forming a via plug(301) standing on a conductive layer(302) which forms a shield for shielding a radio communication module(200), and forming a wiring structure(300) by filling the via plug in a dielectric layer(304); and bonding the wiring structure above a wiring substrate(100) where an electronic component which includes an active element(201) and an passive element(202-206) forming the radio communication module, are mounted.
申请公布号 KR20080026028(A) 申请公布日期 2008.03.24
申请号 KR20070086452 申请日期 2007.08.28
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 FUJII TOMOHARU;OI KIYOSHI
分类号 H01L21/28;H01L27/00 主分类号 H01L21/28
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