| 摘要 |
A method for fabricating a semiconductor device is provided to prevent wafer loss and reduce unscheduled equipment downtime while minimizing formation of eddy current caused by sudden pressure change during the formation of a titanium layer and a titanium nitride layer, by progressively increasing the amount of gas injected into a process chamber. A method for fabricating a semiconductor device comprises the steps of: forming a first metal above a semiconductor substrate with a cell transistor formed thereon(S400); depositing a dielectric layer above the semiconductor substrate comprising the first metal and partially etching the dielectric layer to form a via contact hole which exposes the first metal(S402); injecting a process gas to form a barrier layer within the via contact hole, wherein the process gas is injected by several times with progressively increased amount(S404,406,408); filling a conductive material within a via contact hole comprising the barrier layer to form a via contact(S410); and forming a second metal above the via contact(S412). The process gas is a nitrogen gas to form a titanium nitride layer above titanium.
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