| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a light receiving element having a small junction capacity in the in-plane direction of laminated layers. <P>SOLUTION: In the semiconductor device, a P-N junction between a p type semiconductor layer 11 and an n type semiconductor layer 12 forms a photodiode. The semiconductor device comprises a first p type element isolation region 13 for isolating the n type semiconductor layer 12 into a plurality of light receiving regions S around the photodiode, an element isolation insulating layer 14 formed extensively from part of the surface of the first p type element isolation region 13 to part of the surface of the n type semiconductor layer 12, and a second p type element isolation region 16 provided to be contacted with both the first p type element isolation region 13 and the n type semiconductor layer 12 and to be extruded not toward the first p type element isolation region 13 but toward the light receiving regions S. <P>COPYRIGHT: (C)2008,JPO&INPIT |
