| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve withstand voltage characteristics with respect to an inverse voltage in a termination insulating region. <P>SOLUTION: A semiconductor device is provided with at least double termination trenches 163, which surround a cell area 105, and each termination insulating region 173 that fills each termination trench 163. At least a part of a loop making a round outside the cell area 105 is cut at least in the innermost termination insulating region 173-1. It is composed so as to secure a body region that makes an internal body region and an external body region inside of the termination insulating region 173-1 conductive to each other. A voltage in the body region located outside the innermost termination insulating region is maintained almost equally to a voltage in the body region located inside the innermost termination insulating region. A voltage applied to the termination insulating region 173-1 is suppressed so as to improve a withstand voltage of the semiconductor device 100. <P>COPYRIGHT: (C)2008,JPO&INPIT |
