发明名称 DEFECT INSPECTING METHOD AND DEFECT INSPECTING DEVICE FOR ELECTROLUMINESCENCE DISPLAY DEVICE, AND MANUFACTURING METHOD OF ELECTROLUMINESCENCE DISPLAY DEVICE USING THEM
摘要 <P>PROBLEM TO BE SOLVED: To precisely detect a display defect of an EL display device according to the cause thereof. <P>SOLUTION: A dot-missing defect caused by a short of an EL element is detected, based on the light emission luminance or cathode current obtained, when an element driving transistor Tr2 for controlling a driving current to be supplied to an EL element is made to operate in its linear region and the EL element is held at a light emission level. A dark-dot defect, caused by characteristic variance in the element driving transistor Tr2 can be detected, from the cathode current obtained when the element driving transistor Tr2 is made to operate in its saturated region and the EL element is held at the light emission level. When abnormal display pixels are detected from the light emission luminance, a pixel which is not determined as being a dot-missing defect pixel through dot-missing inspection is found from among abnormal display pixels, and the pixel is detected as a dark-point defect pixel caused by characteristics variance of the element drive transistor Tr2. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008064806(A) 申请公布日期 2008.03.21
申请号 JP20060239626 申请日期 2006.09.04
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 OGAWA TAKASHI
分类号 G09G3/30;G09G3/20;H01L51/50;H05B33/10;H05B33/12 主分类号 G09G3/30
代理机构 代理人
主权项
地址