| 摘要 |
A regulator for a nonvolatile memory device is provided to decrease variation width of a threshold voltage according to external voltage variation by changing circuit configuration to reflect the external voltage variation on a first voltage. A reference voltage generation circuit(310) generates a reference voltage by receiving a power supply voltage. A non-inverting amplifying circuit(320) generates a first and a second voltage in response to the reference voltage. A first switching device transfers the first voltage to an output port in response to a first control signal. A second switching device transfers the second voltage to the output port in response to a second control signal. A first voltage control circuit(R6) decreases the first voltage in proportion to a power supply voltage value in response to the first control signal.
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