| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a current mirror circuit operated in a wide dynamic range up to a low supply voltage. SOLUTION: An input current supplied to an input terminal is caused to flow to a diode-type first MOSFET. The first MOSFET, a current mirror-type second MOSFET, and a third MOSFET which is provided in series between a drain of the second MOSFET and an output terminal and to which a current corresponding to the input current flows, are provided to constitute the current mirror circuit. COPYRIGHT: (C)2008,JPO&INPIT
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