| 摘要 |
PROBLEM TO BE SOLVED: To provide a Hall element whose active layer is formed of InAs and whose deterioration of constant-current sensitivity is prevented to an extent necessary for industrial mass production. SOLUTION: The Hall element comprises a GaAs substrate 101, an InAs layer 102 formed on the GaAs substrate 101, a surface layer 103 formed on the InAs layer 102, a passivation layer 104 formed on the surface layer 103, and electrodes 105 that ohmic-contact the InAs layer 102. In the InAs Hall element to be disclosed, the film thickness of the InAs layer 102 and that of the surface layer 103 are limited respectively to not smaller than 0.45μm and not larger than 0.6μm, and to not smaller than 3 nm and smaller than 100 nm, while the InAs layer 102 and the surface layer 103 are formed in such a way that the film thickness ratio of the InAs layer 102 to the surface layer 103 is not smaller than 0.005 and smaller than 0.2. COPYRIGHT: (C)2008,JPO&INPIT
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