发明名称 GROWING METHOD OF ZINC OXIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a growing method for preparing a highly pure and high quality zinc oxide crystal suitable as a substrate material for a zinc oxide device. SOLUTION: This growing method of zinc oxide crystals is for growing zinc oxide crystals 15 in a growing container 11 having a temperature gradient from one end side toward the other end side in the longitudinal direction, and comprises the steps of heating the growing container 11 charged with a zinc ingot 13 as a solvent and zinc oxide polycrystals 12 as a raw material to a temperature not lower than the melting point of zinc but not higher than the melting point of zinc oxide, and causing reprecipitation of zinc oxide raw material disposed at the higher temperature side of the growing container 11 at the lower temperature side of the growing container 11 by utilizing molten zinc as a solvent, and growing the reprecipitated zinc oxide to obtain the zinc oxide crystal 15. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008063204(A) 申请公布日期 2008.03.21
申请号 JP20060245088 申请日期 2006.09.11
申请人 SUMITOMO METAL MINING CO LTD;TOHOKU UNIV 发明人 ISSHIKI MINORU;MIKAMI MITSURU;SHO YOSHIHIKO
分类号 C30B29/16;C30B11/04;H01L21/368 主分类号 C30B29/16
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