摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for easily estimating a soft error rate (SER) of an SRAM or a memory circuit element in a product design stage. <P>SOLUTION: In the method for calculating the soft error rate, using a measurement result which measures a relation between an area of an information memory node diffusion layer of a memory circuit or an information holding circuit composed of a MISFET and a soft error rate (SER) with a plurality of information memory node voltages Vn as a parameter (S1), a first formula which shows the dependence of an information memory node area of an SER at the same information memory node voltage Vn is led (S2). Next, substituting the relation of the dependence of the information memory node voltage of the SER in the same information memory node area Sc for the first formula from the measurement result, a second formula is led (S3). Then, substituting an information memory node area and an information memory node voltage of a desired memory circuit or an information holding circuit for the second formula, the SER can be calculated (S4). <P>COPYRIGHT: (C)2008,JPO&INPIT |