THE NON VOLATILE MEMORY DEVICE AND MULTI LEVEL CELL PROGRAMMING METHOD THEREOF

摘要

A nonvolatile memory device and a multi level cell programming method thereof are provided to apply a higher voltage than a low level to a bit line for a cell group to program upper bits without programming lower bits, by applying a higher voltage rather than lower bit program during upper bit program operation. A bit line selection part(100) connects a specific bit line and a sensing node selectively. A first register(110) and a second register(120) store specific data. A data comparison part(130) compares data stored in the first register with data stored in the second register and then transfers the data to the sensing node. A first bit line voltage control part(160) applies a voltage of low level to the bit line according to voltage level of the data stored in the first register. A second bit line voltage control part(170) applies a voltage of a first high level to the bit line according to voltage level of the data stored in the second register.