| 摘要 |
A chemical mechanical polishing slurry composition is provided to improve stability of the oxidant against decomposition and reliability in the physical properties, thereby ensuring a stable fabrication process of a semiconductor device. A chemical mechanical polishing slurry composition comprises: a polishing agent comprising at least one metal oxide selected from the group consisting of seria, zirconia and titania; an oxidant; and a stabilizer for stabilizing the decomposition of the oxidant caused by the polishing agent. The polishing agent is used in an amount of 0.01-50 wt% based on the total CMP composition. The stabilizer is at least one selected from the group consisting of phosphoric acid, phosphate, sulfuric acid, sulfate, sulfurous acid, sulfite and glycols.
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