| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure method capable of forming a precise pattern of which a dimensional error is suppressed. <P>SOLUTION: The manufacturing method of a semiconductor device includes: a process for preparing a photomask having first and second main openings 11 and 12 forming a corresponding pattern on a photoresist, and first and second assist openings 21 and 22 forming no corresponding pattern on the photoresist; a process for preparing illumination having a first emission region and a second emission region; and a process for irradiating the photoresist with illumination light from the illumination through the photomask. The first emission region and the second emission region are mutually symmetrical about the center of the illumination. The first and second emission regions contain first and second points respectively. The first point and the second point are mutually symmetrical about the center of the illumination, and are mutually symmetrical about a straight line extended in a second direction vertical to a first direction through the center of the illumination. <P>COPYRIGHT: (C)2008,JPO&INPIT |
