BACKSIDE BONDING SOLAR CELL, AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To arrange p+type diffusion layers and n+type diffusion layers finely without bringing into contact with each other.

SOLUTION: On the backside 1a of a semiconductor substrate 1, p+type diffusion layers 2 and n+type diffusion layers 3 are formed simultaneously in close proximity to each other, a trench 1b is formed from the backside 1a of the semiconductor substrate 1 toward the boundary where the outer edge portions of the p+type diffusion layers 2 and the n+type diffusion layers 3 come into contact and then the outer edge portions of the p+type diffusion layers 2 and the n+type diffusion layers 3 are separated from each other thus arranging the p+type diffusion layers 2 and the n+type diffusion layers 3 in close proximity to each other on the opposite sides of the trench 1b.

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