| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer for a semiconductor device capable of forming an LD with very stable optical characteristics such as a vertical radiation angle and with less variation by enabling high precision structural design and accurate feedback to its growing condition. SOLUTION: In the method of manufacturing the epitaxial wafer for the semiconductor device formed by growing a plurality of epitaxial layers on a substrate, a depthwise profile of Al composition in a plurality of epitaxial layers previously formed is directly estimated by a secondary ion mass analysis method. On the basis of depthwise profile data of the estimated Al composition the epitaxial layer is grown so as for the Al composition to provide a predetermined profile. COPYRIGHT: (C)2008,JPO&INPIT
|
