| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit in which leakage current can be minimized while maximizing speed improvement effect by low threshold voltage. SOLUTION: Functional units 101 to 107, which are formed in a semiconductor chip 100, are divided, in units of functional unit, into functional units 101 to 105 using a transistor of high threshold voltage and functional units 106 and 107 in which low threshold voltage is materialized. The low threshold voltage materialization is applied to each unit in which the application part of the low threshold voltage materialization is included more than a predetermined reference. COPYRIGHT: (C)2008,JPO&INPIT
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