| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning liquid used for a cleaning process of a substrate for a semiconductor device performed, after a chemical-mechanical polishing process in manufacturing a semiconductor device, causing no corrosion or oxidation of a copper wiring, even when the substrate for the semiconductor device having the copper wiring is applied, and efficiently removing the remaining impurities on the surface of an object to be cleaned without causing surface roughness, and to provide a cleaning method that uses the same. SOLUTION: A cleaning liquid is used for a cleaning process of a substrate for a semiconductor device, performed after a chemical-mechanical polishing process in manufacturing of a semiconductor device, and contains polycarboxylic acid, an anionic surfactant having an aromatic ring structure in the molecule, a high-molecular compound having an acidic group in a side chain, and a low-molecular-weight polyethylene glycol. The cleaning liquid is such that the pH is 5 or smaller, and a cleaning method that uses the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT
|
