发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the quality of images sensed by a solid-state image sensing device which can sense images of visible light and infrared light by converting infrared light into visible light by photo luminescence. SOLUTION: A CCD shift resistor is built up on the surface of a p-type silicon board 52 wherein light enters, and a color filter 62 is stacked thereon. A light emitting substance 64 is stacked on the rear surface of the board. Visible light 80 being emitted from an optical system enters a photo diode formed on the silicon board 52 without being affected by the light emitting substance 64, and it is photoelectrically converted and signal charges 82 are produced. On the other hand, infrared light 84 passes through the color filter 62 and the silicon board 52, and reaches the light emitting substance 64, where it is converted into visible light 86. The visible light 86 enters the photo diode from the rear surface of the silicon board 52, and signal charges 88 are produced. The respective signal charges 82 and 88 are transferred by the CCD shift resistor formed on the rear surface of the board, and they are read out as an image signal. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066352(A) 申请公布日期 2008.03.21
申请号 JP20060239680 申请日期 2006.09.05
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 HIGASHITSUTSUMI YOSHIHITO;OZURU YUZO
分类号 H01L27/14;H01L27/148;H04N5/33 主分类号 H01L27/14
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