| 摘要 |
A voltage generator of a flash memory device is provided to maintain stable threshold voltage margin of a program cell or an erase cell by applying a low read or detection voltage as temperature of the device increases, and by applying a high read or detection voltage when a power supply voltage has a high level. A first voltage generator(110) generates a first voltage with a constant level in response to a reference voltage and a power supply voltage. A second voltage generator(120) generates a second voltage in response to the first voltage, and the second voltage has a level varying with the temperature change. A buffer part(130) outputs a third voltage in response to the second voltage. A third voltage generator(140) outputs a fourth voltage in response to the reference voltage, and the level of the fourth voltage varies according to the variation of the power supply voltage. An amplifier(150) amplifies the fourth voltage according to the third voltage.
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