| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus wherein consumption of a raw material (process gas) is reduced and further plasma is stably produced. <P>SOLUTION: The plasma processing apparatus 1 includes an additional gas supply means 7 which supplies an additional gas Gs to a plasma production region P, wherein the additional gas Gs reacts with a side reaction product, produced with generating of plasma, to produce an activated gas. The additional gas supply means 7 includes a nozzle 58 which is formed at a position apart from a nozzle 56, blowing the process gas Gm so as to supply between a first electrode 2 and a work W, and further along the outer periphery on the outside of the plasma production region P, to blow the additional gas Gs. The nozzle 58 is so configured that the additional gas Gs blown from the nozzle 58 is made to flow in a direction proceeding to the plasma production region P and a direction leaving the plasma production P. <P>COPYRIGHT: (C)2008,JPO&INPIT |
