发明名称 PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To perform stable plasma treatment to a substrate by stabilizing plasma in a treatment vessel, when treating the substrate by applying high-frequency power and a DC voltage to identical or separate electrodes. <P>SOLUTION: A plasma treatment apparatus 1 comprises: a high-frequency power supply 16 for applying high-frequency power to at least one of electrodes 5, 6; a DC power supply 22 for applying a DC voltage to at least one of the electrodes 5, 6; a matching circuit 15 provided between the electrode 5 to which high-frequency power is applied, and the high-frequency power supply 16; and a control unit 25 for controlling the high-frequency power supply 16 so that the high-frequency power applied to the electrode is adjusted in advance at timing when the application of a DC voltage to the electrode 5 by the DC power supply 22 is started or completed while high-frequency power is applied to the electrode 5 by the high-frequency power supply 16. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066319(A) 申请公布日期 2008.03.21
申请号 JP20060239159 申请日期 2006.09.04
申请人 TOKYO ELECTRON LTD 发明人 KOSHIMIZU CHISHIO;MATSUMOTO NAOKI
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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