| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist protective film material removable in resist development by reducing an outgas from a resist film, and to provide a pattern forming method. <P>SOLUTION: The resist protective film material for forming a protective film by the resist protective film material on a photoresist layer formed on a wafer and used in the pattern forming method by lithography, which performs development after exposure, is formed by using, as a base, a polymer compound copolymerizing a repeating unit having a carboxyl group and/or a sulfo group and a repeating unit consisting of a hydrocarbon. <P>COPYRIGHT: (C)2008,JPO&INPIT |
