| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing interference capacitance between gates which adjoin to each other by forming a space between the gates with an air layer having a low dielectric ratio. SOLUTION: The manufacturing method of a semiconductor device comprises: a process for providing a semiconductor substrate wherein a gate composed of the lamination structure of a floating gate, a dielectric film, a control gate, a tungsten silicide film and a hard mask film is formed; a process for forming a sacrifice insulating film to a height lower than the gate between the gates; a process for exposing partially the sacrifice insulating film between the spacers, although spacers are formed on the side wall of the exposed gate; a process for forming spaces under the spacers by removing the sacrifice insulating film; and a process for forming the air layer between the gates of lower parts of the spacers so that the space between the spacers may be enclosed by forming the insulating films. COPYRIGHT: (C)2008,JPO&INPIT
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