| 摘要 |
PROBLEM TO BE SOLVED: To provide a molecular beam epitaxy apparatus and a molecular beam epitaxy method capable of uniformly growing a crystalline thin film on a substrate. SOLUTION: The molecular beam epitaxy apparatus A comprises a vacuum growth chamber 1 that is capable of holding the inside thereof in a vacuum and grows a crystal on the substrate Sb housed therein; a substrate holder 2 for holding the substrate Sb; and a crucible 3 that has a tubular sidewall 32 and a bottom 31 and is capable of holding a material Mt to be crystal-grown to the substrate Sb in a melted state. The bottom 31 of the crucible 3 has one or more through holes 31a having sufficient sizes to prevent the melted material Mt from leaking due to surface tension. The substrate holder 2 is disposed to face the outer surface 31b of the bottom 31 for the crucible 3. COPYRIGHT: (C)2008,JPO&INPIT
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