发明名称 SPIN TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a spin transistor that has an amplification function. SOLUTION: The spin transistor is provided with a ferromagnetic free layer (a soft magnetic layer) 2, which shows ferromagnetism and has a magnetic wall 8 in its inside, an insulating barrier layer 3 provided on the ferromagnetic free layer 2, a ferromagnetic fixed layer (a hard magnetic layer) 4, which shows ferromagnetism and is provided on the insulating barrier layer 3, a first electrode 5 provided on the ferromagnetic fixed layer 4, and a second electrode 6 and a third electrode 7 that are provided on the ferromagnetic free layer 2. A laminated body composed of the insulating barrier layer 3 and the ferromagnetic fixed layer 4 is provided in an island shape on the ferromagnetic free layer 2. The second electrode 6 and the third electrode 7 are provided so as to sandwich the laminated body between them. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066479(A) 申请公布日期 2008.03.21
申请号 JP20060241984 申请日期 2006.09.06
申请人 OSAKA UNIV 发明人 SUZUKI YOSHISHIGE;NOZAKI TAKAYUKI;MAEKAWA HIROAKI;MIZUGUCHI MASATERU;TODA YORIYUKI
分类号 H01L29/82;H01L21/8246;H01L27/105;H01L43/08 主分类号 H01L29/82
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