| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a flash memory device that makes a contact plug rectangular for electrically connecting wiring and a semiconductor substrate, and improves an electric property of the contact plug. SOLUTION: An interlayer insulating film 102, first and second hard mask films 104 and 106, and a first photo-resist pattern 108 are formed on a semiconductor substrate 100 sequentially. A peripheral region of a first photo-resist pattern is changed to a silicon-containing layer 110. An upper region of the silicon-containing layer is removed by etching, and an unchanged photo-resist is also removed at the same time to form a silicon-containing layer pattern that is small in terms of a size and a pitch. A second hard mask film pattern is formed by etching to which a second photo-resist pattern is formed whose region is partially made open. By etching, a rectangular first hard mask film pattern is formed which is used as a mask to etch the interlayer insulating film to form a rectangular contact hole. COPYRIGHT: (C)2008,JPO&INPIT
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