| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device without a possibility of giving damage to an IC chip, and to provide its manufacturing device, while making it possible to attain large simplification of process and thinning. SOLUTION: An electric insulating substrate 3 is attached to the formation surface of an electrode pad 2 of an IC chip 1. On the side opposite to the IC chip attached side of the electric insulating substrate 3, a metal foil layer 5 having a conductive pattern is stuck. In a through hole 3c arranged in an electric insulating substrate, a through electrode 4 for connecting the electrode pad 2 of the IC chip and a conductive pattern of the metal foil layer 5 is formed by plating. COPYRIGHT: (C)2008,JPO&INPIT
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