发明名称 ANNEALING APPARATUS, ANNEALING METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To uniformize electrical characteristics of elements basically, in a semiconductor device on a substrate. SOLUTION: An annealing apparatus includes a heating part 12, a memory part 16, a calculation part 17 and a control part 15. The heating part 12 has a plurality of regions, and each of them can be controlled individually in the annealing temperature. In the memory part 16, achieved data, wherein a shape parameter showing the geometrical features of an element to be heated, annealing temperature and electrical characteristics of the element to be heated are associated, is stored. The calculation part 17 decides on the annealing temperature that can obtain the desired electrical characteristics for each of the plurality of regions, based on the shape parameter of the element corresponding to the region under manufacturing on the substrate, in reference to the memory part 16. The control part 15 controls the heating part 12 so as to heat the element that corresponds to the region at the annealing temperature decided for each of the plurality of regions. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066646(A) 申请公布日期 2008.03.21
申请号 JP20060245607 申请日期 2006.09.11
申请人 NEC ELECTRONICS CORP 发明人 ISHIGAKI HIROKAZU
分类号 H01L21/26;H01L21/31;H01L21/336;H01L29/78 主分类号 H01L21/26
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