| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for a semiconductor device including a process capable of simply and absolutely removing an electric supply line for plating without constituting a limiting factor of a high-density interconnection, and to provide a high-density substrate for the semiconductor device manufactured by using the method. SOLUTION: An opening 4 is formed so as to penetrate through an insulating substrate 1 from the rear surfce to the front surface of the insulating substrate 1. And the electric supply line 3 for plating exposed to the rear surface side through the opening 4 is removed by etching. After the removal of the electric supply line 3 for plating, a gold plating layer 10 and a nickel plating layer 9 are absolutely removed together with an adhesive film 11 by pulling to exfoliate the adhesive film 11 adhered to the front surface of the gold plating layer 10. COPYRIGHT: (C)2008,JPO&INPIT
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