| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of an element using a single crystal having a perovskite structure by enabling formation of the single crystal having the perovskite structure of proper quality on a silicon substrate. <P>SOLUTION: A semiconductor device using a ferroelectric film having the perovskite structure includes: an a-axis orientation single-crystal buffer film 13 of Zr<SB>1-x</SB>Si<SB>x</SB>O<SB>2</SB>(0.08≤x≤0.10) formed on a single-crystal silicon substrate 11; a lower electrode 14 which is made of the single crystal of the perovskite structure or Pt and formed on the buffer film 13; the ferroelectric film 15, which is made of the single crystal of the perovskite structure and formed on the lower electrode 14; and an upper electrode 16, which is formed as a single crystal of the perovskite structure or Pt and formed on the ferroelectric film 15. <P>COPYRIGHT: (C)2008,JPO&INPIT |
