发明名称 SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a distributed feedback semiconductor laser which improves the light output ratio of the front and the back of an element, while maintaining a proper single-axis mode yield. SOLUTION: The distributed feedback semiconductor comprises a diffraction grating structure 4 having a phase shift part, a guide layer 3 having the diffraction grating structure 4 in an embedded state, and an active layer 1. When a region is defined as a side that includes a resonator end surface for projecting signal light for transmission as a front region, and a region on a side that includes a resonator end surface for projecting signal light for monitoring as a back region across the phase shift part, the guide layer 3 may have a difference in composition between portions of the back region and the front region. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066620(A) 申请公布日期 2008.03.21
申请号 JP20060245111 申请日期 2006.09.11
申请人 NEC ELECTRONICS CORP 发明人 KITAMURA SHOTARO;KOBAYASHI MASAHIDE
分类号 H01S5/12 主分类号 H01S5/12
代理机构 代理人
主权项
地址