| 摘要 |
PROBLEM TO BE SOLVED: To separately form insulating films having different film thicknesses on a substrate while keeping high accuracy. SOLUTION: A first insulating film 2 on a substrate 1 is etched using a multilayer resist including a resist 3 for i-beam, an SOG film 4 and a resist 5 for KrF/ArF. In this case, the resist 5 for KrF/ArF is first patterned, the SOG film 4 and the resist 3 for i-beam are dry-etched using the resist 5 for KrF/ArF as a mask, and the first insulating film 2 is dry-etched using the resist 3 as a mask. Then, a second insulating film having a film thickness different from that of the first insulating film 2 is formed on the substrate 1 on which the first insulating film 2 is etched. In this way, since the first insulating film 2 can be etched with patterning accuracy of the resist 5 for KrF/ArF, the first insulating film 2 and the second insulating film having different film thicknesses can be separately formed on the substrate 1 while keeping high accuracy. COPYRIGHT: (C)2008,JPO&INPIT
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