| 发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To actualize a semiconductor device including a full-silicide gate electrode having a stable work function value and a threshold value. SOLUTION: The semiconductor device is provided with a gate insulating film 15a formed on a semiconductor substrate and a gate electrode 23 formed on the gate insulating film. The gate electrode 23 is a full silicide gate electrode including a metal silicide film formed by laminating a plurality of crystal grain layers. COPYRIGHT: (C)2008,JPO&INPIT
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| 申请公布号 |
JP2008066378(A) |
申请公布日期 |
2008.03.21 |
| 申请号 |
JP20060240279 |
申请日期 |
2006.09.05 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD;RENESAS TECHNOLOGY CORP |
发明人 |
YAMAMOTO KAZUHIKO;ISHINAGA ATSUSHI;SATO YOSHIHIRO;INOUE MASAO;SAKASHITA SHINSUKE;YOSHIGAMI JIRO |
| 分类号 |
H01L29/78;H01L21/28;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/423;H01L29/49 |
主分类号 |
H01L29/78 |
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