| 摘要 |
A method for fabricating a semiconductor device is provided to improve reliability of a semiconductor device by removing a defect of a semiconductor device caused by a filling defect like voids in forming an interconnection layer in a low-k dielectric layer by a damascene process. During a step for etching a stacked interlayer dielectric(10), the electrons accumulated on the surface of a process substrate(1) are eliminated at least once. The process for removing the electrons is performed in a condition of inner pressure of 100-150 mT in a process chamber, source power of 500-1000 W applied to an upper electrode, bias power of 0-200 W applied to a lower electrode, and source gas including N2 of 100-200 sccm and Ar of 50-100 sccm. The interlayer dielectric can be made of a low dielectric material having a dielectric constant of not greater than 3. The step for etching the interlayer dielectric can be a part of a damascene process for forming a groove or hole for filling a conductive layer.
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