发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To suppress the displacement of a semiconductor device and a lead relative to the upper surface of a thermal diffusion plate at the time of solder reflow in a semiconductor module comprising the semiconductor device having a lower surface connected to the upper surface of the thermal diffusion plate by solder and an upper surface connected to a lead by solder. <P>SOLUTION: A semiconductor module comprises a first conductive film and a second conductive film which are formed on the principal plane of a mounting substrate separately from each other, a thermal diffusion plate connected to the upper surface of the first conductive film by solder, a semiconductor device connected to the upper surface of the thermal diffusion plate by solder, and a lead whose one end and the other end are connected to the second conductive film and the semiconductor device by solder, respectively. On the periphery of a joining region to which the semiconductor device is connected by solder on the upper surface of the thermal diffusion plate, a projecting portion projecting from the joining region is formed. The rotation of a semiconductor chip in the upper surface of the thermal diffusion plate in a solder connection process is prevented by the projecting portion. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066610(A) 申请公布日期 2008.03.21
申请号 JP20060244964 申请日期 2006.09.11
申请人 HITACHI LTD 发明人 FUJIWARA SHINICHI;HARADA MASAHIDE;YOSHINARI HIDETO;ISHIHARA SHOSAKU;YAMASHITA SHIRO;YOSHIDA ISAMU;IKEDA UKYO
分类号 H01L23/48 主分类号 H01L23/48
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