| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently prevent variations generating in a pattern dimension after processing even when a spectrum width such as a half-width or the like varies in laser beams illuminating on a photomask formed with a mask pattern, and to enhance a product yield and a throughput. <P>SOLUTION: A photoresist film PR on which a mask pattern image is projected is developed, whereby shape information of a resist pattern formed on a wafer W is obtained. When an exposure is carried out, a polarizing state of the laser beams illuminating on a photomask PM is adjusted based on the shape information of the obtained resist pattern so that a shape of the resist pattern is formed corresponding to a design pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT |
