| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method which can form a resist pattern having a high aspect ratio while suppressing a pattern collapse. SOLUTION: The method of forming a pattern includes processes of: forming a resist film 13 on a semiconductor substrate 10; transferring a pattern to the resist film 13 by irradiating the resist film 13 with an energy beam; supplying a developer to the resist film 13 to develop the pattern-transferred resist film 13; supplying a material for a coating film containing a solvent and a solute different from the resist film to the semiconductor substrate to substitute the developer with the material for the coating film; forming the coating film 17 in such a manner as to embed a portion of the resist film 13 which has been dissolved by development by volatilizing the solvent in the material for the coating film; and removing the coating film 17 by dry etching. COPYRIGHT: (C)2008,JPO&INPIT |
