METHOD FOR PREVENTING CORROSION OF METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A method for avoiding corrosion of a metal interconnection of a semiconductor device is provided to remove residues without a wet cleaning process by depositing an arbitrary insulation layer after a metal interconnection is patterned and by performing a plasma dry etch process. A metal interconnection(22) of an aluminum-copper alloy is deposited on an interlayer dielectric(21). The metal interconnection is patterned. An arbitrary insulation layer(24) is deposited on the residue(23) generated in the patterning process and the metal interconnection. A plasma dry etch process is performed to simultaneously remove the arbitrary insulation layer and the residue. The arbitrary insulation layer can be one of an oxide layer or a nitride layer.