| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element with high reliability in which a short circuit at a PN junction and current leakage are reduced as compared with a conventional one, and a manufacturing method thereof. <P>SOLUTION: A nitride semiconductor light emitting element comprises a conductive substrate, a first metal layer, a semiconductor layer of a second conductivity type, an emission layer, and a semiconductor layer of a first conductivity type that are formed in this order. The nitride semiconductor light emitting element also includes an insulating layer covering at least side surfaces of the semiconductor layer of the second conductivity type, the emission layer, and the semiconductor layer of the first conductivity type. The nitride semiconductor light emitting element and a manufacturing method thereof are provided. The nitride semiconductor light emitting element may further include a second metal layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
