| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor array for obtaining satisfactory display without crosstalks, even when a semiconductor is formed larger than the desired pattern, and when the semiconductor is provided on substantially the entire thin-film transistor, and to provide an image display device and a drive method. <P>SOLUTION: The thin-film transistor array has a gate electrode and a capacitor electrode on a base material, a source electrode, a drain electrode, and a pixel electrode connected to the drain electrode that is arranged through a gate insulating film, and a semiconductor layer at least disposed between the source electrode and the drain electrode. On a planar visual location, the capacitor electrode is larger in size than the pixel electrode, in the region where at least the semiconductor layer is disposed, and the pixel electrode is included in the capacitor electrode. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
