SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate treatment method and a substrate treatment apparatus capable of inhibiting the formation of an insulating layer on a substrate surface where the insulating layer is not needed and selectively forming the layer in a non-through hole when forming the insulating layer in the non-through hole formed at the substrate by an electrodeposition method, and to provide a semiconductor device. SOLUTION: An excessive insulating layer 15 formed on the surface of a semiconductor substrate 10 when forming the non-through hole 11 on the substrate 10 and forming the insulating layer 15 in the hole 11 by the electrodeposition method is removed by friction by a friction means 17, thereby selectively forming the insulating layer 15 in the non-through hole 11. COPYRIGHT: (C)2008,JPO&INPIT