| 摘要 |
PROBLEM TO BE SOLVED: To solve problems with the surface roughness of an antiferromagnetic layer and the crystallinity of a tunnel barrier layer to obtain favorable magnetoresistance characteristics, for achieving the thinning of a tunnel magnetoresistance effect element layer. SOLUTION: In a magnetoresistance effect layer in which an underlayer, an antiferromagnetic layer, a first stationary magnetic layer, a non-magnetic middle layer, a second stationary magnetic layer, a tunnel barrier layer, a free magnetic layer and a protective layer are stacked in order, by smoothing the first stationary magnetic layer, the nonmagnetic middle layer is also smoothed, whereby a stable antiferromagnetic exchange coupling can be obtained between the first stationary magnetic layer and the second stationary magnetic layer. Further, the tunnel barrier layer is also smoothed, whereby stable magnetoresistance characteristics can be obtained even if the layer is formed thin. Additionally, the tunnel barrier layer requiring crystallinity can have favorable magnetoresistive characteristics. COPYRIGHT: (C)2008,JPO&INPIT
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