| 摘要 |
A method for fabricating a semiconductor device is provided to minimize the lateral diffusion between a source region and a drain region by forming a diffusion barrier layer in a boundary region of the source region and the drain region. A gate insulation layer(320) and a gate electrode(330) are sequentially formed on an active region of a semiconductor substrate(300). An LDD(lightly doped drain) region(350a) is formed in the active region by using the gate electrode as a mask. Spacers(340) are formed on both sidewalls of the gate electrode. A source/drain region(350) is formed in the active region by using the gate electrode and the spacer as a mask. Nitrogen ions are implanted into a boundary region of the source region and the drain region to form a diffusion barrier layer. In the source/drain region, boron ions are implanted in a condition of energy of 3-5 KeV, an ion implantation quantity of 1Î10^15-5Î10^15 ion/cm^2 and an ion implantation angle of zero degree.
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