| 摘要 |
<P>PROBLEM TO BE SOLVED: To control a semiconductor device with a nonvolatile memory and an IC card to certainly hold initial data without deteriorating basic performance required for the nonvolatile memory by solving problems that a ferroelectric memory is fast in access speed and has high cyclability while having low stress registance (thermal stress resistance and stress tolerance), meanwhile, a fuse memory has a high stress resistance and an excellent data storage stability, while allowing only one write operation. <P>SOLUTION: The semiconductor device is equipped with; a first nonvolatile memory 1; a second nonvolatile memory 2 which is higher in stress-resistance than the first nonvolatile memory 1, and an initialization control section 3 which reads initial data from the second nonvolatile memory 2, copies the read initialization data to the first nonvolatile memory 1, for initialization. <P>COPYRIGHT: (C)2008,JPO&INPIT |
