| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent destruction of an element constituting a circuit caused by an erroneous operation in a nonvolatile semiconductor memory device which inhibits rewriting of data. <P>SOLUTION: For example, a writing operation instruction signal WE is abnormally input during a reading operation. Then, a writing operation control combination circuit 20 outputs a writing control signal SL which is VDD (e.g., 1.5V) to activate a writing gate 13. When the abnormal input of the writing operation instruction signal WE is input into the asynchronous reset terminal (reset) of a reading operation control order circuit 30, the reading operation control order circuit 30 immediately makes inactive an equalizing signal EQL, a reference potential control signal REFE, and a differential amplifier control signal SAE and stops the reading operation. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
