发明名称 LOW TEMPERATURE METHOD FOR FORMING FILM OF POTASSIUM NIOBATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a low temperature method for forming a film of potassium niobate, by which a thin film of potassium niobate can be formed at a low temperature without using a specific device necessitating vacuum or high energy or an expensive specific raw material. <P>SOLUTION: A single crystal of K<SB>2</SB>NbO<SB>3</SB>F is allowed to deliquesce on a substrate and then dried. When the single crystal is allowed to deliquesce, preferable humidity and temperature are≥60% and 0-50°C, respectively. Thereby, a high quality single crystal thin film of potassium niobate can be formed at room temperature. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008063198(A) 申请公布日期 2008.03.21
申请号 JP20060244764 申请日期 2006.09.08
申请人 NIIGATA UNIV 发明人 TODA KENJI;UEMATSU KAZUYOSHI;SATO MINEO;IIDA AKIHIRO
分类号 C30B29/30;H01L41/18;H01L41/39 主分类号 C30B29/30
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