发明名称 |
MANUFACTURING METHOD OF THIN FILM TRANSISTOR SUBSTRATE, THIN FILM TRANSISTOR SUBSTRATE, AND LIQUID DISPLAY DEVICE EQUIPPED WITH THE THIN FILM TRANSISTOR SUBSTRATE, AND DETECTION APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor substrate which restrains deterioration of manufacturing yield and reliability of a TFT by minimizing the number of masks. <P>SOLUTION: The method has a first process for forming a first lamination part constituting a gate line 1 and a second lamination part constituting a part of a source line 2 by sequentially forming a first conductive film, a first insulating film, a first semiconductor film, a second semiconductor film and a second conductive film on an insulating substrate and then carrying out patterning, a second process for forming a TFT 5 by exposing a part of the first semiconductor film by patterning each first lamination part, a third process for forming contact holes 16a to 16e by forming a second insulating film to cover each first lamination part and each second lamination part and then carrying out patterning and a fourth process for forming a conductive part 17a constituting the rest of the source line 2 and a picture element electrode 17b by forming a third conductive film to cover the second insulating film and then carrying out patterning. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008066537(A) |
申请公布日期 |
2008.03.21 |
申请号 |
JP20060243299 |
申请日期 |
2006.09.07 |
申请人 |
SHARP CORP |
发明人 |
YAMAZAKI CHIKAO;NAKADA YUKINOBU;HARA YOSHIHITO;MATSUMOTO TAKAO |
分类号 |
H01L21/336;G02F1/1368;G09F9/30;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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